Defect characterization of KTP single crystals
نویسندگان
چکیده
منابع مشابه
Effect of impurities on the optical properties of KTP single crystals grown from flux
In the present work, KTP crystals have been grown by spontaneous nucleation technique in flux medium using K6P4O13 flux. 0.4-1 °C/h cooling rates were applied in the spontaneous nucleation process. The presence and amount of impurities has been determined by using XRF. The optical transmission spectra of impure KTP crystals in the UV–visible region are discussed. The transmission cut-off is cle...
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The cluster representation matrices have already been successfully used to enumerate close-packed vacancy clusters in all single-lattice crystals [I, 2]. Point defect clusters in double-lattice crystals may have identical geometry but are distinct due to unique atomic postions enclosing them. The method of representation matrices is extended to make it applicable to represent and enumerate ...
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Three batches of the commercial energetic material RDX, as received from various production locations and differing in sensitivity towards shock initiation, have been characterized with different microscopic techniques in order to visualize the defect content in these crystals. The RDX crystals are embedded in an epoxy matrix and cross-sectioned. By a treatment of grinding and polishing of the ...
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Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings...
متن کاملcomputational enumeration of point defect clusters in double- lattice crystals
the cluster representation matrices have already been successfully used to enumerate close-packed vacancy clusters in all single-lattice crystals [i, 2]. point defect clusters in double-lattice crystals may have identical geometry but are distinct due to unique atomic postions enclosing them. the method of representation matrices is extended to make it applicable to represent and enumerate the ...
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ژورنال
عنوان ژورنال: Bulletin of Materials Science
سال: 1992
ISSN: 0250-4707,0973-7669
DOI: 10.1007/bf02927500